Triethyl Phosphate (TEPO)
High-purity phosphorus ester for PSG & BPSG deposition.
Enables precise dielectric layering in advanced semiconductor manufacturing.
Electronic-Grade Phosphorus Source for PSG and BPSG Deposition
Triethyl Phosphate (TEPO) is a high-purity, electronic-grade phosphorus ester primarily used as a precursor in the formation of Phospho-silicate Glass (PSG) and Boro-phospho-silicate Glass (BPSG) layers. These dielectric layers are deposited on silicon wafers using CVD and other techniques, serving as insulators and stress-relief components in modern semiconductor structures.
TEPO plays a vital role in the manufacturing of semiconductors, discrete components, and MEMS products. Its exceptionally low metallic impurities and high thermal stability make it an essential specialty chemical for microelectronics production.
NAGASE supplies Triethyl Phosphate worldwide in electronic-grade quality for semiconductor, micro- and nanotechnology industries – backed by technical support and global distribution capabilities.
Chemical Formula: PO(OC2H5)3
Molecular Weight: 182.15
Physical & Chemical Properties
A clear and colorless liquid. Freely soluble in Ethanol. Soluble in other organic solvents like Ether and Benzene. Soluble in water.
Melting Point: -56.4°C
Boiling Point: 215°C
Density: 1.07kg/L
Stable in normal condition but reacts violently with strong bases and strong oxidants.
Applications
Triethyl Phosphate is mainly used for PSG and BPSG deposition in semiconductor wafer processing.
- Deposition of PSG and BPSG layers
- Wafer fabrication processes for IC and chip production
- Semiconductor manufacturing workflows
- Production of MEMS devices
- Processing of discrete components
Features
Triethyl Phosphate offers high purity, stable deposition behavior, and compatibility with advanced semiconductor processes.
- Electronic-grade purity – Suitable for critical PSG and BPSG applications
- Low metallic impurities to support cleanroom-level wafer environments
- Thermal stability – Ideal behavior during CVD and related processes
- Excellent compatibility with silicon wafer materials and dopants
- Global availability – Supplied in technical and logistic compliance worldwide
Product Specification
| Product | 8.5N | ||
|---|---|---|---|
| Purity (based on metals analyzed), min | 99.9999995 % | ||
| （Al）max | 0.1 ppb | （Pt）max | 0.05 ppb |
| （Sb）max | 0.1 ppb | （K）max | 0.2 ppb |
| （As）max | 0.2 ppb | （Re）max | 0.05 ppb |
| （Ba）max | 0.05 ppb | （Rh）max | 0.05 ppb |
| （Be）max | 0.05 ppb | （Rb）max | 0.05 ppb |
| （Bi）max | 0.05 ppb | (Ag) max | 0.1 ppb |
| （Cd）max | 0.05 ppb | （Na）max | 0.3 ppb |
| （Ca）max | 0.5 ppb | （Sr）max | 0.05 ppb |
| （Ce）max | 0.05 ppb | （Ta）max | 0.05 ppb |
| （Cr）max | 0.05 ppb | （Tl）max | 0.05 ppb |
| （Co）max | 0.05 ppb | （Th）max | 0.05 ppb |
| （Cu）max | 0.1 ppb | （Sn）max | 0.05 ppb |
| （Ga）max | 0.1 ppb | （Ti）max | 0.05 ppb |
| （Ge）max | 0.05 ppb | （W ）max | 0.05 ppb |
| （Au）max | 0.1 ppb | （U ）max | 0.05 ppb |
| （Hf）max | 0.05 ppb | (V) max | 0.05 ppb |
| （In）max | 0.05 ppb | （Zn）max | 0.2 ppb |
| （Ir）max | 0.05 ppb | （Zr）max | 0.05 ppb |
| （Fe）max | 0.3 ppb | （B ）max | 0.5 ppb |
| （Pb）max | 0.1 ppb | Cl- max | 50 ppb |
| （Li）max | 0.05 ppb | Water max | 20 ppm |
| （Mg）max | 0.2 ppb | Particle ≥0.2 µm max | 10 p/ml |
| （Mn）max | 0.1 ppb | Particle ≥0.3 µm max | 7 p/ml |
| （Hg）max | 0.1 ppb | Particle ≥0.5 µm max | 5 p/ml |
| （Mo）max | 0.1 ppb | Particle ≥1.0 µm max | 1 p/ml |
| （Ni）max | 0.1 ppb | Assay min | 99.99% |
| （Nb）max | 0.05 ppb | Chroma max | 5APHA |
| （Pd）max | 0.05 ppb | Shelf life | 24 months |
Packaging Size
Packaging: Stainless Steel Cabinet
Fill Volume: 2 gallons,5 gallons (19 L),10 gallons.
