Tetraethyl Orthosilicate for Precision CVD and Thin Film Deposition

Reliable performance for next-generation semiconductor fabrication.
Nagase’s high-purity TEOS ensures optimal film quality, consistency, and reliability across a wide range of deposition environments.

High-Purity TEOS for Advanced CVD and Oxide Layer Fabrication

Tetraethyl orthosilicate (TEOS) is a high-purity silicon compound used as a key precursor in chemical vapor deposition (CVD) for producing high-quality silicon dioxide (SiO₂) films. It plays a crucial role in forming uniform insulating layers on semiconductor wafers and is valued for its excellent volatility, reactivity, and process control. TEOS is widely used in microelectronics, photonics, and MEMS fabrication where precise dielectric properties are essential.

As a trusted supplier for the electronics industry, NAGASE offers ultra-high purity TEOS optimized for cleanroom environments, ensuring consistent quality, stable film growth, and low defect levels.

Chemical Formula: Si(C2H5O)4

Molecular Weight: 208.33

Physical & Chemical Properties:
Appearance: apparently colorless liquid

Melting point: -77 ℃
Boiling point: 169 ℃
Relative density: 0.9346 g/ml

Stable in air. Slightly soluble in water. Hydrolyze very slowly in pure water. Acid or base can speed up its hydrolyzation.

Applications

Application Areas

TEOS is widely used in advanced material processing where precise oxide film formation and silicon dioxide purity are critical.

  • Chemical Vapor Deposition (CVD) – Silicon precursor for forming high-purity SiO₂ thin films on semiconductor wafers
  • Semiconductor manufacturing – Essential for producing ICs, transistors, and advanced microelectronic devices
  • MEMS and discrete devices – Enables reliable oxide layer formation in Micro-Electro-Mechanical Systems
  • Optoelectronics and photonics – Supports fabrication of waveguides, sensors, and transparent dielectric structures
  • Solar cell production – Applied in passivation and protective coatings for silicon-based photovoltaic devices

Features

Key Features

TEOS offers exceptional purity, film uniformity, and process control for critical thin-film applications in electronics and photonics.

  • Ultra-high purity – Minimizes contamination risk in cleanroom-grade semiconductor environments
  • Stable volatility and reactivity – Ideal for controlled CVD processing and uniform SiO₂ film growth
  • Versatile applications – Supports industries from semiconductors and solar to optics and specialty coatings
  • Excellent compatibility – Works with advanced etching and deposition systems in modern microfabrication
  • Reliable global supply – Backed by NAGASE’s logistics network and robust quality assurance

Product Specification

Item Grade/99.9999%（6N） Item Grade/99.9999%（6N）
Spec value/ppb Spec value/ppb
Al <100 Mo <5
As <50 Na <100
Ag <10 Ni <20
Au <10 Pb <20
Ba <10 Sb <20
Bi <10 Sn <50
Ca <100 Sr <5
Cd <5 Ti <10
Co <5 Zn <30
Cr <10 Ga <100
Cu <15 Ge <100
Fe <100 Pd <100
Hg <10 Se <100
In <5 Te <100
K <100 V <100
Li <10 B <100
Mg <100 Si <500
Mn <20 S <200
 

Product 9N
Purity (based on metals   analyzed), min 99.9999999%
（Al）max 0.1 ppb （Pb）max 0.1   ppb
（Ag）max 0.1 ppb （Pd）max 0.05 ppb
(As) max 0.1 ppb （Pt）max 0.05 ppb
（Au）max 0.1 ppb （Rb）max 0.05 ppb
（B）max 0.5 ppb （Re）max 0.05 ppb
（Ba) max 0.1 ppb （Rh）max 0.05 ppb
（Be）max 0.05 ppb （Sb）max 0.05 ppb
（Bi）max 0.05 ppb （Sn）max 0.05 ppb
（Ca）max 0.2 ppb （Sr）max 0.05 ppb
（Cd）max 0.05 ppb （Ta）max 0.05 ppb
（Ce）max 0.05 ppb (Th) max 0.05 ppb
（Co）max 0.1 ppb （Ti）max 0.05 ppb
（Cu）max 0.1 ppb （Tl）max 0.05 ppb
（Cr）max 0.1 ppb （U）max 0.05 ppb
（Fe）max 0.2 ppb （V）max 0.05 ppb
（Ga）max 0.05 ppb （W）max 0.05 ppb
（Ge）max 0.05 ppb （Zn）max 0.1 ppb
（Hf）max 0.05 ppb （Zr）max 0.05 ppb
（Hg）max 0.05 ppb Cl- max 50 ppb
（In）max 0.05 ppb Water max   5 ppm
（Ir）max 0.05 ppb Ethanol max   3 ppm
（K）max 0.2 ppb Parricles ≥0.1µm max 50 p/ml
（Li）max 0.05 ppb Parricles ≥0.2µm max 10 p/ml
（Mg）max 0.1 ppb Parricles ≥0.3µm max 7 p/ml
（Mn）max 0.1 ppb Parricles ≥0.5µm max 5 p/ml
（Mo）max 0.05 ppb Parricles ≥1.0µm max 1p/ml
（Na）max 0.1 ppb Assay min 99.99%
（Nb）max 0.1 ppb Chroma max 10APHA
（Ni）max 0.2 ppb Shelf life 24 months

Packaging Size

Container: Stainless Steel Cylinder.

Packaging: Stainless Steel Cabinet.

Fill volume: 2 gallons,5 gallons (19 L),10 gallons, 200 L.

Frequently Asked Questions about Tetraethyl Orthosilicate

What is TEOS used for?
TEOS is primarily used as a silicon precursor in CVD processes to form high-purity silicon dioxide (SiO₂) films on semiconductor wafers and optical substrates.

Why is TEOS important in semiconductor manufacturing?
Its high purity and stable reactivity enable the formation of uniform dielectric layers with low contamination, making it essential for integrated circuits, transistors, and MEMS devices.

What are the advantages of using TEOS in CVD processes?
TEOS offers controlled volatility and excellent compatibility with modern deposition systems, resulting in precise film thickness, good step coverage, and low defect density.

Is TEOS suitable for cleanroom environments?
Yes, ultra-high purity TEOS is specifically tailored for use in cleanroom-grade semiconductor and photonics fabrication, with strict control of metallic and organic impurities.

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Electronics

Enes Islemecioglu
Sales Manager