Trimethylaluminum (TMA)
High-purity phosphorus precursor for PSG and BPSG layer formation.
Enables controlled doping and dielectric deposition in advanced semiconductor manufacturing.
High-Purity Aluminum Precursor for ALD and Compound Semiconductors
Trimethylaluminum (TMA) is a volatile, metal-organic aluminum source used in various thin film deposition processes such as ALD (Atomic Layer Deposition), PECVD (Plasma Enhanced Chemical Vapor Deposition), and MOCVD (Metal Organic Chemical Vapor Deposition). It is widely employed to form high-quality Al₂O₃ passivation and dielectric layers on silicon wafers and to manufacture advanced compound semiconductors including AlAs, AlGaAs, AlN, and related III-V materials.
Due to its reactivity and ultra-high purity, TMA plays a vital role in semiconductor manufacturing, photovoltaics, LED production, and high-performance microelectronics.
NAGASE supplies electronic-grade TMA worldwide for advanced ALD and MOCVD applications – with full technical and logistical support.
Molecular Formula: Al(CH3)3
Molecular Weight: 72.09
Physical and Chemical Properties:
A clear and colorless liquid.
Melting Point: 15℃
Boiling Point: 127℃
Density: 0.752g/ml.
Ignites when exposed to air. Reacts violently with alcohol, acid or water of which molecular structure has an active hydrogen group. Miscible with Aliphatic Hydrocarbons, such as Hexane and Heptane, and Aromatic Hydrocarbons, such as Toluene and xylene.
Applications
Trimethylaluminum is used for Al₂O₃ passivation, high-k film deposition, and compound semiconductor formation in ALD and MOCVD processes.
- Deposition of Al₂O₃ passivation and dielectric layers
- Atomic Layer Deposition (ALD) in microelectronics
- MOCVD growth of III-V semiconductors
- Production of AlGaAs, AlGaN, AlInGaN and related materials
- Photovoltaic applications for silicon cell surface treatment
Features
Trimethylaluminum offers ultra-high purity, high reactivity, and exceptional control in ALD and MOCVD-based thin film technologies.
- Ultra-high purity grade – Minimizes contamination in semiconductor processing
- Excellent volatility – Ideal for ALD and vapor-phase applications
- Metal-organic aluminum source – Enables controlled Al incorporation
- Compatible with ALD, PECVD, and MOCVD for diverse deposition needs
- Globally available – Supplied by NAGASE with technical and logistic support
Product Specification
| Product | 5N | 6N | Product | 5N | 6N |
|---|---|---|---|---|---|
| Ag,max | 0.4 ppm | 10 ppb | Li,max | 0.1 ppm | 5 ppb |
| As,max | 0.5 ppm | 10 ppb | Mg,max | 0.05 ppm | 10 ppb |
| B,max | 0.4 ppm | 10 ppb | Mn,max | 0.05 ppm | 10 ppb |
| Ba,max | 0.1 ppm | 10 ppb | Na,max | 0.5 ppm | 20 ppb |
| Be,max | 0.2 ppm | 5 ppb | Ni,max | 0.4 ppm | 20 ppb |
| Bi,max | 0.2 ppm | 5 ppb | Pb,max | 1 ppm | 10 ppb |
| Ca,max | 0.1 ppm | 10 ppb | Se,max | 1 ppm | 10 ppb |
| Cd,max | 0.1 ppm | 10 ppb | Si,max | 1 ppm | 20 ppb |
| Co,max | 0.1 ppm | 10 ppb | Sn,max | 0.1 ppm | 10 ppb |
| Cr,max | 0.1 ppm | 20 ppb | Te,max | 0.1 ppm | 10 ppb |
| Cu,max | 0.15 ppm | 20 ppb | Ti,max | 0.1 ppm | 50 ppb |
| Fe,max | 0.1 ppm | 50 ppb | v,max | 0.2 ppm | 50 ppb |
| Ga,max | 0.2 ppm | 50 ppb | Zn,max | 0.2 ppm | 50 ppb |
| Ge,max | 0.1 ppm | 50 ppb | Zr,max | 0.2 ppm | 50 ppb |
| Hg,max | 0.1 ppm | 10 ppb | Shelf life | 36 months | |
| K,max | 1 ppm | 10 ppb | / | / | / |
Packaging Size
Container Material: Stainless Steel EP 316 L
Valve Type: 1/4’’ diaphragm valve.
Valve Material: Stainless Steel 316 L
Valve Connection: 1/4’’ VCR
Net Weight: 14.2 kg, 72 kg and 300 kg
